Products

01. Common Mode Filter

In the operating environment of electronic products, high-speed interfaces such as USB and HDMI operate at high data rates, making them susceptible to Electromagnetic Interference (EMI) and Radio Frequency Interference (RFI). Meanwhile, hot plugging under power supply can expose these interfaces to transient voltage surges and electrostatic interference. These issues may lead to failure of signal recognition by receivers or even circuit damage. Accordingly, common-mode filters (CMF) integrated with TVS serve as an effective EMI mitigation solution.

02. EMI Filters with Integrated ESD Protection

EMI Filters with Integrated ESD Protection are composite components that combine EMI low-pass filtering and ESD electrostatic protection in a single package, engineered specifically for high-speed signal interfaces of consumer electronics, automotive electronics and other devices.

03. RF Diode

RF diodes are diodes specially designed to operate in the radio frequency (RF) band and play a vital role in numerous fields such as wireless communication, radar, and radio frequency identification (RFID). Featuring fast switching characteristics, they can process high-frequency signals efficiently and perform functions including signal detection, frequency mixing, and switching control. Schottky diodes are a common type; their low forward voltage drop and high switching speed make them ideal components for signal detection and frequency mixing in RF circuits.

04. LDO

A low-dropout regulator (LDO), also known as low-dropout linear regulator, is a type of linear DC regulator designed to supply stable DC voltage power. Compared with conventional linear DC regulators, LDOs can operate with a much smaller voltage difference between input and output.

05. DC-DC

DC-DC converters feature high efficiency, large output current capability and low quiescent current. With the improvement of integration level, many new-generation DC-DC converters only require several external inductors and filter capacitors. Nevertheless, such power controllers suffer from relatively large output ripple and switching noise, as well as higher cost.

06. MOSFET

MOSFETs feature high input resistance (100,000,000 ~ 1,000,000,000 Ω), low noise, low power consumption, wide dynamic range, easy integration, absence of secondary breakdown, broad safe operating area and excellent thermal stability. They have become a strong competitor to bipolar transistors and power transistors.

07. Schottky Diode

A Schottky diode is a kind of low-power, ultra-high-speed semiconductor device. Its most notable features include an extremely short reverse recovery time (as short as several nanoseconds) and a forward voltage drop of only around 0.4 V. It is widely used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes and protection diodes. It also functions as rectifier diodes and small-signal detector diodes in circuits such as microwave communication systems. Schottky diodes are commonly found in communication power supplies, frequency converters and other equipment.

08. Transient Voltage Suppressor

Transient Voltage Suppressor, abbreviated as TVS diode. The electrical characteristics of TVS diodes are determined by the PN junction area, doping concentration and chip resistance. Its capability to withstand surge current is proportional to its PN junction area. TVS devices are widely adopted for the protection of semiconductors and sensitive components, commonly applied to secondary power supply circuits, signal circuit protection and electrostatic discharge prevention.

09. ESD Protection Device

ESD stands for Electrostatic Discharge. It refers to the release of static electricity. Since the mid-20th century, ESD has evolved into an academic discipline focused on the generation and dissipation of static electricity, electrostatic discharge models, as well as the effects of electrostatic discharge — including electrothermal (spark) effects such as fires and explosions triggered by static electricity, and electromagnetic effects like electromagnetic interference.

10. IGBT

IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device packaged with an IGBT chip and a Freewheeling Diode (FRD). It combines the high input impedance of MOSFETs with the low on-state voltage drop and high-current capability of bipolar transistors. Multiple IGBT dies are packaged into an IGBT module.